advance product information march 15, 2005 1 triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com 27 - 31 ghz 2w balanced power amplifier TGA4513-CP key features ? 27 - 31 ghz bandwidth ? > 32 dbm nominal p1db ? 33 dbm nominal psat ? 22 db nominal gain ? imd3 is 32 dbc @ 18 dbm scl ? 12 db nominal return loss ? bias: 6 v, 840 ma ? package dimensions: 13.34 x 9.65 x 1.85 mm (0.525 x 0.380 x 0.073 in) primary applications ? satellite ground terminal ? point to point radio ? point to multi point radio ?lmds measured data bias conditions: vd = 6 v, id = 840 ma product description the triquint TGA4513-CP is a compact 2 watt high power amplifier packaged mmic for ka-band applications. it provides 22 db nominal gain and 12 db nominal return loss. the tga4513 provides a nominal 33 dbm of output power. it is a lead free device. the part is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals, point to point radio and lmds. the TGA4513-CP is 100% rf tested to ensure performance compliance. lead-free & rohs compliant. evaluation boards are available. note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice. -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 27 27.5 28 28.5 29 29.5 30 30.5 31 frequency (ghz) s-parameter (db) s21 s11 s22 29 29.5 30 30.5 31 31.5 32 32.5 33 33.5 34 27 28 29 30 31 frequency (ghz) output power (dbm) p1db psat
advance product information march 15, 2005 2 triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com table i maximum ratings 1/ symbol parameter value notes v + positive supply voltage 7 v 2/ v - negative supply voltage range -3 to 0 v i + positive supply current 1.05 a 2/ ? i g ? gate supply current 10 ma 3/ p in input continuous wave power 22 dbm p d power dissipation 6.71 w 2/ 4 / t ch operating channel temperature 150 0 c5/ t m mounting temperature (30 seconds) 260 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ total current for the device. 4/ when operated at this bias condition with a base plate temperature of 70 0 c, the median life is 1.0e+6 hrs. 5/ junction operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TGA4513-CP
advance product information march 15, 2005 3 triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com table ii electrical characteristics (ta = 25 0 c, nominal) parameter typical units drain operating 6 v quiescent current 840 ma small signal gain, s21 22 db input return loss, s11 14 db output return loss, s22 12 db output power @ 1 db compression gain, p1db > 32 dbm power @ saturated, psat 33 dbm imd3 @ 18 dbm scl, at 30 ghz 32 dbc TGA4513-CP table iii thermal information parameter test conditions t ch ( q c) t jc ( q c/w) t m (hrs) q jc thermal resistance (channel to backside of package) v d = 6 v i d = 0.84 a (quiescent) p diss = 5.04 w tbase = 70 c 130.1 11.92 5.9 e+6
advance product information march 15, 2005 4 triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com measured data bias conditions: vd = 6 v, id = 840 ma -35 -30 -25 -20 -15 -10 -5 0 20 22 24 26 28 30 32 34 36 38 40 frequency (ghz) s11 (db) 25 degc 70 degc -40 degc -35 -30 -25 -20 -15 -10 -5 0 20 22 24 26 28 30 32 34 36 38 40 frequency (ghz) s22 (db) 25 degc 70 degc -40 degc 0 5 10 15 20 25 30 20 22 24 26 28 30 32 34 36 38 40 frequency (ghz) s21 (db) 25 degc 70 degc -40 degc TGA4513-CP
advance product information march 15, 2005 5 triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 -113579111315171921 pin (dbm) pae(% ) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 ids (a) 27 ghz 28 ghz 29 ghz 30 ghz 31 ghz si 6 16 18 20 22 24 26 28 30 32 34 36 -1 1 3 5 7 9 111315171921 pin (dbm) pout(dbm) 10 15 20 25 30 35 power gain (db) 27 ghz 28 ghz 29 ghz 30 ghz 31 ghz si 6 measured data bias conditions: vd = 6 v, id = 840 ma TGA4513-CP
advance product information march 15, 2005 6 triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com measured data bias conditions: vd = 6 v, id = 840 ma, f = 10 mhz 15 20 25 30 35 40 45 50 55 60 6 8 10 12 14 16 18 20 22 24 26 output power per tone (dbm) imd3 (dbc) 29 ghz 30 ghz 31 ghz TGA4513-CP
advance product information march 15, 2005 7 triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com package pinout diagram TGA4513-CP
advance product information march 15, 2005 8 triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com mechanical drawing top view side view 0. 81 53 0.0028/ 0.0 0 24 0.0000 lid substrate stack . 1.8542 .005 dimensions in inches 0.073 +/- 0.005 0.000 0.032 +0.003/-0.002 TGA4513-CP dimensions in inches [minimeter]
advance product information march 15, 2005 9 triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com bias schematic TGA4513-CP tow 1 mil bond wires are recommended for the rf input, output and vg. four bond wires are recommended for vd .
advance product information march 15, 2005 10 triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com assembly of a TGA4513-CP into a module manual assembly for prototypes 1. clean the module with acetone. rinse with alcohol and di water. allow the module to fully dry. 2. to improve the thermal and rf performance, we recommend attaching a heatsink to the bottom of the package. if the TGA4513-CP is mounted to the heatsink with mounting screws, we recommend an indium shim or other compliant material be inserted between the TGA4513-CP and the heatsink to reduce thermal contact resistance due to air gaps. the TGA4513-CP may also be attached to the heatsink using sn63 solder or any other tin/lead solder. the TGA4513-CP may also be mounted with diemat dm6030hk conductive epoxy. 3. the dc and rf interconnects may be gold bondwires or gold ribbons. the rf interconnects should be as short as possible. a minimum of two 1 mil wires are recommended for the rf input, rf output, vg, and four 1 mil bond wires for vd. ordering information part package style TGA4513-CP carrier plate, lead free TGA4513-CP
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